Characterization and Comparison of Strained Si1-yCy Metal Oxide Semiconductor Field-Effect Transistor Grown by Gas-Source Molecular Beam Epitaxy and Hot Wire Cell Method
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概要
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Strained Si1-yCy metal oxide semiconductor field-effect transistors (MOSFETs) were fabricated by gas-source molecular beam epitaxy (GS-MBE) and the Hot Wire (HW) Cell method, and their electrical characteristics were compared. The strained Si1-yCy films were grown by GS-MBE at 600°C and by the HW-Cell method at 200°C. The electron mobility of the MOSFET fabricated by GS-MBE showed a large decrease while that fabricated by the HW-Cell method showed a slight decrease. It was considered that this difference was due to the difference in non-substitutional carbon content. We found that the increase in growth temperature caused the decrease in substitutional carbon content and increase in non-substitutional carbon content. These results indicated that lowering the growth temperature decreases the non-substitutional carbon content and improves the electrical characteristics of Si1-yCy films.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
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Abe Katsuya
Department Of Applied Chemistry Faculty Of Engineering Kogakuin University
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Ishihara Hanae
Department Of Physical Electronics Tokyo Institute Of Technology
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Watahiki Tatsuro
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Yamada Akira
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Watahiki Tatsuro
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Abe Katsuya
Department of Electrical and Electronic Engineering, Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan
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Ishihara Hanae
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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