Characterization of Nitride Layer on 6H-SiC Prepared by High-Temperature Nitridation in NH3
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概要
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The nitride layers were prepared by direct thermal nitridation of 6H-SiC substrates at 1200–1570°C in a NH3 atmosphere. The layer was characterized by using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and Raman scattering spectroscopy. The thickness of the nitride layers prepared at lower than 1400°C was estimated to be less than 10 nm. The higher nitridation temperature resulted in the formation of a thicker surface layer. XPS measurement showed that the surface layer was composed of N, Si, C and O. Peaks corresponding to $\alpha$-Si3N4 were detected in the Raman spectra and the XRD patterns of the sample prepared at higher than 1500°C, indicating the crystallization of the nitrided layer.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-01-15
著者
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Abe Katsuya
Department Of Applied Chemistry Faculty Of Engineering Kogakuin University
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KAMIMURA Kiichi
Department of Electric and Electronic Engineering, Faculty of Engineering, Shinshu University
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NAKAO Masato
Department of Electrical and Electronic Engineering, Faculty of Engineering, Shinshu University
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Hashimoto Susumu
Department Of Environmental Engineering Faculty Of Engineering Osaka University
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Liu Yingshen
Department Of Electrical And Electronic Engineering Shinshu University
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Hayashibe Rinpei
Department of Electrical and Electronic Engineering, Faculty of Engineering, Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan
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Yamakami Tomohiko
Department of Electrical and Electronic Engineering, Faculty of Engineering, Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan
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Hashimoto Susumu
Department of Electrical and Electronic Engineering, Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan
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Nakao Masato
Department of Electrical and Electronic Engineering, Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan
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Liu YingShen
Department of Electrical and Electronic Engineering, Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan
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