Characterization and Device Application of Tensile-Strained Si1-yCy Layers Grown by Gas-Source Molecular Beam Epitaxy
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概要
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Tensile-strained Si1-yCy alloy films were grown on Si(001) by gas-source molecular beam epitaxy (GS-MBE). The substitutional C contents (Cs) were estimated from X-ray diffraction patterns and were found to decrease with increasing substrate temperature. The thermal stability of the Si1-yCy alloy films was investigated by annealing experiments. The Cs value was also reduced at annealing temperatures higher than 850°C. Metal-oxide-semiconductor (MOS) transistors were fabricated using the strained Si1-yCy channel layer grown by GS-MBE and the transistor characteristics were confirmed.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-06-15
著者
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Abe Katsuya
Department Of Applied Chemistry Faculty Of Engineering Kogakuin University
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Yabe Chiaki
Department Of Physical Electronics Tokyo Institute Of Technology
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Watahiki Tatsuro
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Yamada Akira
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Yabe Chiaki
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Abe Katsuya
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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