Substitutional C Incorporation into Si1-yCy Alloys Using Novel Carbon Source, 1,3-Disilabutane
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概要
- 論文の詳細を見る
A new carbon source, 1,3-disilabutane (H3Si-CH2-SiH2-CH3:1,3-DSB), is proposed for use in the growth of epitaxial Si1-yCy films with high C substitutionality. The Si1-yCy films have been deposited by plasma-enhanced chemical vapor deposition (PECVD). The Si1-yCy films grown using C2H2 or SiH2(CH3)2 show a reduction in C substitutionality when total C content is more than 2%, whereas they show a marked improvement in C substitutionality for C contents up to 2.5% using 1,3-DSB as a C source.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-07-15
著者
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Yagi Shuhei
Department Of Physical Electronics Tokyo Institute Of Technology
-
Abe Katsuya
Department Of Applied Chemistry Faculty Of Engineering Kogakuin University
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Yamada Akira
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Yagi Shuhei
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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