Characterization of Nitride Layer on 6H-SiC Prepared by High-Temperature Nitridation in NH_3
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-01-30
著者
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ABE Katsuya
Department of Physical Electronics, Tokyo Institute of Technology
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KAMIMURA Kiichi
Department of Electric and Electronic Engineering, Faculty of Engineering, Shinshu University
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NAKAO Masato
Department of Electrical and Electronic Engineering, Faculty of Engineering, Shinshu University
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Kamimura K
Faculty Of Engineering Shinshu University
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Kamimura K
Keio Univ. Yokohama Jpn
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Hashimoto Susumu
Department Of Environmental Engineering Faculty Of Engineering Osaka University
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LIU YingShen
Department of Electrical and Electronic Engineering, Shinshu University
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HAYASHIBE Rinpei
Department of Electrical and Electronic Engineering, Shinshu University
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YAMAKAMI Tomohiko
Department of Electrical and Electronic Engineering, Shinshu University
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Liu Yingshen
Department Of Electrical And Electronic Engineering Shinshu University
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Hayashibe R
Faculty Of Engineering Shinshu University
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Nakao Masato
Faculty Of Engineering Shinshu University
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