Characterization of Al-based insulating films fabricated by physical vapor deposition

概要

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A novel submount substrate with high thermal conductivity for optoelectronic devices is proposed. The substrate is fabricated by depositing an Al-based insulating film on a copper substrate. AlN films were deposited by RF reactive sputtering using an Al target (5N) in a gas mixture of Ar and N2. Al2O3 films were deposited by oxygen-ion-assisted electron beam (EB) evaporation. Many conductive paths were detected in the AlN films. These defects were introduced in the AlN film during a photolithography process for fabricating electrode patterns because the alkaline developer dissolved the film. An Al–OH peak in Fourier transform infrared spectroscopy (FT-IR) spectra suggested that the Al(OH)3 formation was one of the reasons for the presence of conductive paths in the AlN film. In the case of Al2O3 films, no conducting path was detected in electrical measurements, and no marked change in surface morphology was observed in scanning electron microscopy (SEM) images, after treatment with the alkaline developer. The Al2O3/Cu structure is a candidate for the novel submount substrate with high thermal conductivity.
INST PURE APPLIED PHYSICSの論文
2008-01-25