Preparation of Cuprous Oxide (Cu_2O) Thin Films by Reactive DC Magnetron Sputtering(<Special Section>Recent Progress in Oxide Thin Films by Sputtering)

概要

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Cuprous Oxide Cu_2O films were depositedby reactive DC magnetron sputtering. The substrate temperature and oxygen partial pressure were found to be important parameters in controlling the film property. The single-phase Cu_2O films were successfully obtained by carefully controlling the oxygen partial pressure with suppression of CuO formation. The (100)-oriented epitaxial Cu_2O film was grown on the (11^^-02) surface of single-crystal Al_2O_3. The fundamental absorption edge of the Cu_2O film was determined to be about 2 eV by photo-transmission measurement. The resistivity of the film was of the order of 10^5 Ωcm.
社団法人電子情報通信学会の論文
2004-02-01