Growth of Polycrystalline Zn1-XMgXO Thin Films Using EtCp2Mg and MeCp2Mg by Metal Organic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
Polycrystalline Zn1-XMgXO films have been grown by metal–organic chemical vapor deposition (MOCVD). Bis(ethylcyclopentadienyl) magnesium [EtCp2Mg: (C2H5C5H4)2Mg] and bis(methylcyclopentadienyl) magnesium [MeCp2Mg: (CH3C5H4)2Mg] were used as Mg sources, and H2O and diethylzinc (DEZn) were used as an oxidant and Zn source, respectively. To confirm the decomposition of these Mg sources by water, MgO films were first grown, and it was found that MgO films with periclase structure can be grown without DEZn at substrate temperatures ranging from 115 to 160 °C. Zn1-XMgXO films with wurtzite structure were also successfully deposited with DEZn by the MOCVD process, and the maximum bandgap of 3.73 eV was obtained by using MeCp2Mg. This bandgap energy corresponded to the Mg content of 23%. The polycrystalline Zn1-XMgXO films were applied to a buffer layer of Cu(InGa)(SSe)2 solar cells, and the efficiency of the best solar cell was achieved over 10% with an area of 0.2 cm2 under AM1.5 (100 mA/cm2) irradiation.
- 2007-08-15
著者
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Chiba Yoshiyuki
Department Of Dermatology Yokohama City University School Of Medicine
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Yamada Akira
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Meng Fanying
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Chiba Yoshiyuki
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Yamada Akira
Quantum Nanoelectorics Research Center, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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