Highly Conductive Boron Doped Microcrystalline Si Films Deposited by Hot Wire Cell Method and its Application to Solar Cells
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概要
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Boron doped microcrystalline silicon (p-$\mu$c-Si) films were successfully deposited by the Hot Wire Cell method using a gas mixture of pure silane (SiH4) and diborane (0.5% B2H6 in H2). The influence of various deposition parameters on the structural and electrical properties of the films was investigated to obtain highly conductive p-$\mu$c-Si films. A high dark conductivity ($\sigma_{\text{d}}$) of 84.6 S/cm and a low activation energy of 0.02 eV were achieved for 550-nm-thick films. For thin films with a thickness of 15 nm, a $\sigma_{\text{d}}$ of $4\times 10^{-2}$ S/cm was obtained. The thin p-$\mu$c-Si was incorporated into p–i–n amorphous silicon (a-Si) and microcrystalline silicon ($\mu$c-Si) solar cells, in which intrinsic layers were deposited by photo chemical vapor deposition (photo-CVD). The initial conversion efficiencies of 9.04% and 6.17% were obtained for a-Si and $\mu$c-Si solar cells, respectively.
- 2003-06-15
著者
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Kim Mingyu
Department Of Physical Electronics Tokyo Institute Of Technology
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Ide Yoshinori
Department Of Physical Electronics Tokyo Institute Of Technology
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Miyajima Shinsuke
Department Of Physical Electronics Tokyo Institute Of Technology
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Yamada Akira
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Miyajima Shinsuke
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Ide Yoshinori
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Kim Mingyu
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Yamada Akira
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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