Temperature Dependence of Protocrystalline Silicon/Microcrystalline Silicon Double-Junction Solar Cells
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概要
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We have investigated the temperature dependence of hydrogenated protocrystalline silicon (pc-Si:H)/hydrogenated microcrystalline silicon (μc-Si:H) double-junction solar cells. A boron-doped zinc oxide (ZnO:B) film is employed as an intermediate layer between the pc-Si:H top cell and the μc-Si:H bottom cell. The fabricated solar cells exhibit good stability against light soaking. Photocurrent density–voltage (photo $J$–$V$) characteristics are measured under AM 1.5 illumination at ambient temperatures in the range of 25–75 °C. The double-junction solar cells show a temperature coefficient (TC) for conversion efficiency ($\eta$) of around $-0.30$ to $-0.45$%/°C, which between the TC for $\eta$ of the pc-Si:H top and μc-Si:H bottom cells. It is found that the values of TC for $\eta$ are inversely proportional to the initial open-circuit voltage ($V_{\text{oc}}$). In contrast, these values become higher with the increase in the crystalline volume fraction ($X_{\text{c}}$) of the i-μc-Si:H in the bottom cells. Since the pc-Si:H/μc-Si:H double-junction solar cells exhibit high $\eta$, low light-induced degradation, and low temperature dependence, they are good candidates for solar cells that operate in high-temperature or tropical regions.
- 2008-03-25
著者
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Myong Seung
Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Sriprapha Kobsak
Department Of Physical Electronics Tokyo Institute Of Technology
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Sriprapha Kobsak
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Myong Seung
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Yamada Akira
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Yamada Akira
Quantum Nanoelectorics Research Center, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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