Growth and Characterization of Highly Tensile-Strained Ge on InxGa1-xAs Virtual Substrate by Solid Source Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
Tensile-strained Ge is a promising material for Si-based optoelectronic integrated circuits and next-generation high-performance multijunction solar cells. We have grown highly tensile-strained Ge films on strain-relaxed InxGa1-xAs virtual substrates using solid-source molecular beam epitaxy. The tensile strain in a Ge film is controlled over a wide range from 0.40 to 1.55% by changing the In mole fraction in InxGa1-xAs buffer layers. The 1.55% tensile strain achieved is much higher than previously reported values. These results demonstrate the usefulness of the InxGa1-xAs buffer method for investigating the properties of tensile-strained Ge.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-11-25
著者
-
Yamada Akira
Department Of Cardiology Aso-iizuka Hospital
-
Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
-
Konagai Makoto
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S9-9 O-okayama, Meguro, Tokyo 152-8552, Japan
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Hoshina Yutaka
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S9-9 O-okayama, Meguro, Tokyo 152-8552, Japan
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