Characterization of ZnO/CdS/CuInSe_2 Thin-Film Solar Cells by Deep-Level Transient Spectroscopy
スポンサーリンク
概要
- 論文の詳細を見る
Trap energy levels in CuInSe_2 (CDS) films have been measured by means of deep-level transient spectroscopy (DLTS). ZnO/CdS/CIS solar cells with conversion efficiencies of 5-11% were used as samples. Hole traps were detected for all samples measured in this study. Activation energy of traps in each sample was estimated to be in the range from 78 to 226 meV, which is shallower than any other reported values. Characteristics of the trap were thought to depend on the fabrication process of CIS films.
- 社団法人応用物理学会の論文
- 1995-05-15
著者
-
Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
-
Konagai Makoto
Department Of Electrical And Electronic Engineering Faculty Of Engineering Tokyo Institute Of Techno
関連論文
- Novel In(OH)_3:Zn^ Buffer Layer for Cu(InGa)Se_2 Based Solar Cells
- Effect of ZnTe and CdZnTe Alloys at the Back Contact of 1-μm-Thick CdTe Thin Film Solar Cells
- Phosphorous Doping of Strain-Induced Si_C_y Epitaxial Films Grown by Low-Temperature Chemical Vapor Deposition
- Preferred Orientation Control of Cu(In_Ga_x)Se_2 (x≈0.28) Thin Films and Its Influence on Solar Cell Characteristics
- P-Doping into Strain-Induced Si_C_y Epitaxial Films Grown by Low Temperature Chemical Vapor Deposition
- Epitaxial Growth of γ-In_2Se_3 Films by Molecular Beam Epitaxy
- Epitaxial Growth of Si_C_y Film by Low Temperature Chemical vapor Deposition
- Formation of pn Homojunction in Cu(InGa)Se_2 Thin Film Solar Cells by Zn Doping
- Amorphous-to-Polycrystalline Silicon Transition in Hot Wire Cell Method
- Improvement of the Electrochemical Profiling Technique of Carrier Concentration in Cu(InGa)Se_2 Thin Film Solar Cells
- High-Efficiency Amorphous Silicon Solar Cells with ZnO as Front Contact
- Improvement of Stabilized Efficiency of Amorphous Silicon Solar Cell by SiH_2Cl_2 Addition
- Characterization of Highly Efficient CdTe Thin Film Solar Cells by the Capacitance-Voltage Profiling Technique
- Improvement in Performances of ZnO : B/i-ZnO/Cu(InGa)Se_2 Solar Cells by Surface Treatments for Cu(InGa)Se_2
- Electrical and Structural Characterizations of Cu(InGa)Se_2 Thin Films Using Electrochemical Capacitance-Voltage Method and Focused-Ion Beam Process
- Cu(InGa)Se_2 Thin-film Solar Cells with High Resistivity ZnO Buffer Layers Deposited by Atomic Layer Deposition
- Prospects of Thickness Reduction of the CdTe Layer in Highly Efficient CdTe Solar Cells Towards 1 μm
- Molecular Beam Epitaxy and Characterization of Layered In_2Se_3 Films Grown on Slightly Misoriented (001)GaAs Substrates
- Heteroepitaxy and Multiquantum Well Structure of Layered Compound GaSe/GaS_xSe_ on (001) GaAs Substrate
- Characterization of Highly Efficient CdTe Thin Film Solar Cells by Low-Temperature Photoluminescence
- Characterizaiton of ZnIn_xSe_y Thin Films as a Buffer Layer for High Efficiency Cu(InGa)Se_2 Thin-Film Solar Cells
- Characterization of Tensile Strained Si_1_yCy Alloy Grown by Photo- and Plasma Chemical Vapor Deposition at Very Low Temperature
- Native Defect Control of CdTe Thin Film Solar Cells by Close-Spaced Sublimation
- Photoluminescence Studies and Solar-Cell Application of CuInSe_2 Thin Films Prepared using Selenization Techniques
- Photoluminescence Study of CuInSe_2 Thin Films Prepared by the Selenization Technique
- Study of CuInSe_2 Formation Kinetics in the Selenization Process by Raman Spectroscopy
- Developmemt of High-Efficiency CuIn_xGa_Se_2 Thin-Film Solar Cells by Selenization with Elemental Se Vapor in Vacuum
- Heteroepitaxy of Layered Compound InSe and InSe/GaSe onto GaAs Substrates
- InGaP/GaAs Heterojunction Bipolar Transistors with an Ultra-High Carbon-Doped Base (p=1.5×10^cm^)
- Low Temperature Growth of Heavily Carbon-Doped GaAs by Metalorganic Molecular Beam Epitaxy with Elemental Gallium
- Characterization of Carbon-Doped GaAs Grown by Molecular Beam Epitaxy Using Neopentane as Carbon Source
- Carbon δ-Doping in GaAs by Metal-Organic Molecular Beam Epitaxy
- Structural Aspects of Heavily Carbon-Doped GaAs Grown by Metalorganic Molecular Beam Epitaxy (MOMBE)
- GaAs Pseudo-Heterojunction Bipolar Transistor with a Heavily Carbon-Doped Base
- P-Type Carbon-Doped InGaAs Grown by Metalorganic Molecular Beam Epitaxy
- GaAs PN Diodes with Heavily Carbon-Doped P-Type GaAs Grown by MOMBE
- Theoretical Analysis of Heavy Doping Effects on AlGaAs/GaAs HBT's
- Heavily Carbon-Doped P-Type InGaAs Grown by Metalorganic Molecular Beam Epitaxy
- Preparation of GaAs and Ga_Al_xAs Multi-Layer Structures by Metalorganic Molecular Beam Epitaxy
- Metalorganic Molecular-Beam Epitaxial Growthand Characterization of GaAs Using Trimethyl- and Triethyl-Gallium Sources
- Photoluminescence properties of Cu(InGa)Se2 thin films prepared by mechanochemical process (Special issue: Nano electronic materials)
- Highly Stable ZnO Thin Films by Atomic Layer Deposition
- Textured ZnO Thin Films for Solar Cells Grown by a Two-step Process with the Atomic Layer Deposition Technique
- Growth of Transparent Conductive Oxide ZnO Films by Atomic Layer Deposition
- Polycrystalline Cu(InGa)Se_2 Thin-Film Solar Cells with ZnSe Buffer Layers
- Photoinduced Oxidation of Epitaxial Ga_2Se_3 Grown by Molecular Beam Epitaxy
- Effect of Heavy Doping on Band Gap and Minority Carrier Transport of AlGaAs/GaAs HBT's (SOLID STATE DEVICES AND MATERIALS 1)
- Defect Evaluation of Heavily P-Doped Si Epitaxial Films Grown at Low Temperature
- Control of the Arrangement of the Native Gallium Vacancies in Ga_2Se_3 on (100)GaAs by Molecular Beam Epitaxy
- Formation of ZnGa_2Se_4 Epitaxial Layer during Molecular Beam Epitaxial Growth of Ga_2Se_3 on ZnSe
- Raman Study of Epitaxial Ga_2 Se_3 Films Grown by Molecular Beam Epitaxy
- Optical Anisotropy of Vacancy-Ordered Ga_2Se_3 Grown by Molecular Beam Epitaxy
- Metalorganic Chemical Vapor Deposition of ZnO Using D_2O as Oxidant
- Optimization of ZnO Films for Amorphous Silicon Solar Cells
- Large-Area ZnO Thin Films for Solar Cells Prepared by Photo-Induced Metalorganic Chemical Vapor Deposition
- Mobility Enhancement of Textured ZnO Films by Ultraviolet Light Irradiation
- Low-Temperature Si Epitaxy by Photochemical Vapor Deposition with SiH_2Cl_2
- p-Type a-SiC:H Films Using Triethylboron and Its Application to Solar Cells
- Effects of Deuterium on Low-Temperature Si Epitaxy by Photo-Chemical Vapor Deposition
- Heavily P-Doped (>10^ cm) Silicon Films Grown by Photochemical Vapor Deposition at a Very Low Temperature of 250℃
- Photochemical Vapor Deposition of Si/Si_Ge_x Strained Layer Superlattices at 250℃ : Silicon Heterostructures(Solid State Devices and Materials 1)
- Epitaxial Growth of Silicon by Plasma Chemical Vapor Deposition at a Very Low Temperature of 250℃
- ZnSe:Mn DC-Electroluminesent Cells Using Di-π-Cyclopentadienyl Manganese as a New Manganese Source Fabricated by Plasma-Assisted MOCVD
- Preparation of Nanocrystalline Silicon in Amorphous Silicon Carbide Matrix
- TiO_2-Coated Transparent Conductive Oxide (SnO_2:F) Films Prepared by Atmospheric Pressure Chemical Vapor Deposition with High Durability against Atomic Hydrogen
- Heavily Carbon-Doped P-Type GaAs Grown on GaAs Substrates with Various Orientations by Metalorganic Molecular Beam Epitaxy
- High Quality Amorphous Silicon Films Prepared by Atmospheric-Pressure Photo-CVD : Condensed Matter
- Optically Detected Magnetic Resonance in Fluorinated Amorphous Silicon (a-Si: H, F)
- High Deposition Rate of Polycrystalline Silicon Thin Films Prepared by Hot Wire Cell Method
- High-Efficiency Delta-Doped Amorphous Silicon Solar Cells Prepared by Photochemical Vapor Deposition
- Junction Properties of nip and pin Amorphous Si Solar Cells Prepared by a Glow Discharge in Pure Silane : III-2: AMORPHOUS SOLAR CELLS (1) : Proparation Process
- High Quality Aluminum Oxide Passivation Layer for Crystalline Silicon Solar Cells Deposited by Parallel-Plate Plasma-Enhanced Chemical Vapor Deposition
- Structural Analysis of Side and SiGeC Alloys by Ab Initio Total-Energy Calculations
- Structural Analysis of SiGeC Alloys by ab initio Total-Energy Calculations
- Fabrication of Sub-Micron Gap Structures using Directly-Deposited Amorphous Carbon Wires
- Development of Polycrystalline Culn_xGa_Se_2 Thin-Film Solar Cells with Band Gap of 1.3 to 1.5 eV
- Growth Mechanism during Silicon Epitaxy by Photochemical Vapor Deposition at Low Temperatures
- Characterization of Hydrogen in Epitaxial Silicon Films Grown at Very Low Temperatures
- Effects of Temperature and Spectral Irradiance on Performance of Silicon-Based Thin Film Multijunction Solar Cells
- p-Ga_Al_As/p-Ga_Al_yAs/n-Ga_Al_yAs Solar Cells : II-1: COMPOUND SOLAR CELLS
- Amorphous Silicon Thin Films Prepared by Hot Wire Cell Method and Its Application to Solar Cells
- Analysis of H_2-Dilution Effects on Photochemical Vapor Deposition of Si Thin Films
- Heavily B-Doped Epitaxial Si Films Grown by Photochemical Vapor Deposition at Very Low Temperature (
- Numerical Analysis of a Solar Cell with Tensile-Strained Ge as a Novel Narrow-Band-Gap Absorber
- Improvement of Film Quality in CuInSe2 Thin Films Fabricated by a Non-Vacuum, Nanoparticle-Based Approach
- Room Temperature Operation of Amorphous Carbon-Based Single-Electron Transistors Fabricated by Beam-Induced Deposition Techniques
- Single-Electron Tunneling through Amorphous Carbon Dots Array
- Sub-Micron Tungsten Carbide/Amorphous Carbon Stacked Diode Fabricated by Ion- and Electron-Beam-Induced Deposition Technique
- Fabrication of Sub-Micron Tungsten Carbide (WCx)/Amorphous Carbon (a-C) Stacked Junction By Beam-Induced Reaction Processes
- Anomalous Electrical Characteristics of Epitaxial InN Films Having a High Electron Comcentratiorn at Very Low Temperature
- Application of Carbonaceous Material for Fabrication of Nano-Wires with a Scanning Electron Microscopy
- Effects of Annealing and Atomic Hydrogen Treatment on Aluminum Oxide Passivation Layers for Crystalline Silicon Solar Cells
- Characterization of cuInSe_2 thin Films by Photoluminescence Measurements
- Present Status and Future Prospects of Silicon Thin-Film Solar Cells
- Improvement of Rear Surface Passivation Quality in p-Type Silicon Heterojunction Solar Cells Using Boron-Doped Microcrystalline Silicon Oxide
- Boron-doped Microcrystalline Silicon Oxide Film for Use as Back Surface Field in Cast Polycrystalline Silicon Solar Cells
- Texture Etching of Si with Atomic Hydrogen Generated by Hot Wire Method through SiO2 Masks for Solar Cell Applications
- Growth of Polycrystalline Zn1-XMgXO Thin Films Using EtCp2Mg and MeCp2Mg by Metal Organic Chemical Vapor Deposition
- Characterization of Defects-Location in Hydrogenated Microcrystalline Silicon Thin Films and Its Influence on Solar Cell Performance
- Low-temperature Deposition of Hydrogenated Microcrystalline Silicon Thin Films by Photochemical Vapor Deposition Technique and Their Application to Thin Film Solar Cells