Heteroepitaxy and Multiquantum Well Structure of Layered Compound GaSe/GaSxSe1-x on (001)GaAs Substrate
スポンサーリンク
概要
- 論文の詳細を見る
For the heterostructure with GaSe, the epitaxial growth of GaSxSe1-x films on misoriented (001)GaAs substrate was investigated. We grew c-axis inclined GaSxSe1-x/GaSe/GaSxSe1-x heterostructure films on misoriented (001)GaAs substrate. The scanning electron microscopic (SEM) images and the photoluminescence spectra confirmed the existence of GaSe and GaSxSe1-x layers. Furthermore, multiquantum well structure of the GaSe/GaSxSe1-x system were fabricated for the first time.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1998-10-15
著者
-
Yamada Akira
Department Of Cardiology Aso-iizuka Hospital
-
OKAMOTO Tamotsu
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
-
BUDIMAN Maman
Department of Electrical & Electronic Engineering, Tokyo Institute of Technology
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
-
Okamoto Tamotsu
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology,
-
Budiman Maman
Department of Electrical & Electronic Engineering, Tokyo Institute of Technology,
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