High Efficiency Amorphous Silicon Solar Cells with "Delta-Doped" P-Layer
スポンサーリンク
概要
- 論文の詳細を見る
Novel a-Si p-i-n solar cells with "delta-doped ($\delta$-doped)" p-layers were shown to enhance the hole concentration of the p-layers. A high photoconductivity of $1\times 10^{-4}$ Scm-1 (AM1, 100 mWcm-2) was obtained using a $\delta$-doped p-layer. The existence of $\delta$-deped boron layers was confirmed by cross-sectional TEM (transmission electron microscope) observations. A conversion efficiency of 11.5% was obtained for glass/TCO/p-i-n/Al solar cells with $\delta$-doped p-layers. The photovoltaic characteristics of $\delta$-doped p-layer solar cells exhibited a high open-circuit voltage of over 0.9 V, which is higher than that of solar cells with a conventional a-SiC p-layer. We furthermore investigated the stability of solar cells with $\delta$-doped p-layers.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-07-20
著者
-
Yamanaka Satoshi
Department Of Cardiovascular Medicine Kyoto Prefectural University Of Medicine
-
Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
-
Takahashi Kiyoshi
Department Of Agronomy Faculty Of Agriculture Tohoku University
-
Yamanaka Satoshi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1, Ohkayama, Meguro-ku, Tokyo 152
-
Kazama Yoshiyuki
Ishikawagima-Harima Heavy Industries Co., Ltd., 3-1-15, Toyosu, Koto-ku, Tokyo 135
-
Seki Kazuhisa
Yoshida Kogyo Co., Ltd., 2000, Yoshida, Kurobe-city, Toyama 938
-
Kim Woo-Yeol
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1, Ohkayama, Meguro-ku, Tokyo 152
関連論文
- Novel In(OH)_3:Zn^ Buffer Layer for Cu(InGa)Se_2 Based Solar Cells
- Effect of ZnTe and CdZnTe Alloys at the Back Contact of 1-μm-Thick CdTe Thin Film Solar Cells
- Phosphorous Doping of Strain-Induced Si_C_y Epitaxial Films Grown by Low-Temperature Chemical Vapor Deposition
- Preferred Orientation Control of Cu(In_Ga_x)Se_2 (x≈0.28) Thin Films and Its Influence on Solar Cell Characteristics
- P-Doping into Strain-Induced Si_C_y Epitaxial Films Grown by Low Temperature Chemical Vapor Deposition
- Epitaxial Growth of γ-In_2Se_3 Films by Molecular Beam Epitaxy
- Epitaxial Growth of Si_C_y Film by Low Temperature Chemical vapor Deposition
- Formation of pn Homojunction in Cu(InGa)Se_2 Thin Film Solar Cells by Zn Doping
- Amorphous-to-Polycrystalline Silicon Transition in Hot Wire Cell Method
- Improvement of the Electrochemical Profiling Technique of Carrier Concentration in Cu(InGa)Se_2 Thin Film Solar Cells
- High-Efficiency Amorphous Silicon Solar Cells with ZnO as Front Contact
- Improvement of Stabilized Efficiency of Amorphous Silicon Solar Cell by SiH_2Cl_2 Addition
- Characterization of Highly Efficient CdTe Thin Film Solar Cells by the Capacitance-Voltage Profiling Technique
- Improvement in Performances of ZnO : B/i-ZnO/Cu(InGa)Se_2 Solar Cells by Surface Treatments for Cu(InGa)Se_2
- Electrical and Structural Characterizations of Cu(InGa)Se_2 Thin Films Using Electrochemical Capacitance-Voltage Method and Focused-Ion Beam Process
- Cu(InGa)Se_2 Thin-film Solar Cells with High Resistivity ZnO Buffer Layers Deposited by Atomic Layer Deposition
- Prospects of Thickness Reduction of the CdTe Layer in Highly Efficient CdTe Solar Cells Towards 1 μm
- Molecular Beam Epitaxy and Characterization of Layered In_2Se_3 Films Grown on Slightly Misoriented (001)GaAs Substrates
- Heteroepitaxy and Multiquantum Well Structure of Layered Compound GaSe/GaS_xSe_ on (001) GaAs Substrate
- Characterization of Highly Efficient CdTe Thin Film Solar Cells by Low-Temperature Photoluminescence
- Characterizaiton of ZnIn_xSe_y Thin Films as a Buffer Layer for High Efficiency Cu(InGa)Se_2 Thin-Film Solar Cells
- Characterization of Tensile Strained Si_1_yCy Alloy Grown by Photo- and Plasma Chemical Vapor Deposition at Very Low Temperature
- Native Defect Control of CdTe Thin Film Solar Cells by Close-Spaced Sublimation
- Apoptotic Myocytes Generate Monocyte Chemoattractant Protein-1 to Draw the Activated Macrophages in Ischemia-Reperfused Rat Hearts
- Aldosterone Activates Calcineurin-Dependent Mitochondrial Apoptotic Pathway in Cultured Rat Cardiac Myocytes
- Amlodipine Inhibits Doxorubicin-lnduced Apoptosis in Neonatal Rat Cardiac Myocytes : Amlodipine Releases Nitric Oxide from Cultured Rat Cardiac Myocytes
- Cardioprotective Effect of Carvedilol against Hypoxia/Reoxygenation Injury in Cultured Rat Cardiac Myocytes
- Photoluminescence Studies and Solar-Cell Application of CuInSe_2 Thin Films Prepared using Selenization Techniques
- Photoluminescence Study of CuInSe_2 Thin Films Prepared by the Selenization Technique
- Study of CuInSe_2 Formation Kinetics in the Selenization Process by Raman Spectroscopy
- Developmemt of High-Efficiency CuIn_xGa_Se_2 Thin-Film Solar Cells by Selenization with Elemental Se Vapor in Vacuum
- Heteroepitaxy of Layered Compound InSe and InSe/GaSe onto GaAs Substrates
- InGaP/GaAs Heterojunction Bipolar Transistors with an Ultra-High Carbon-Doped Base (p=1.5×10^cm^)
- Low Temperature Growth of Heavily Carbon-Doped GaAs by Metalorganic Molecular Beam Epitaxy with Elemental Gallium
- Characterization of Carbon-Doped GaAs Grown by Molecular Beam Epitaxy Using Neopentane as Carbon Source
- Carbon δ-Doping in GaAs by Metal-Organic Molecular Beam Epitaxy
- Structural Aspects of Heavily Carbon-Doped GaAs Grown by Metalorganic Molecular Beam Epitaxy (MOMBE)
- GaAs Pseudo-Heterojunction Bipolar Transistor with a Heavily Carbon-Doped Base
- P-Type Carbon-Doped InGaAs Grown by Metalorganic Molecular Beam Epitaxy
- GaAs PN Diodes with Heavily Carbon-Doped P-Type GaAs Grown by MOMBE
- Theoretical Analysis of Heavy Doping Effects on AlGaAs/GaAs HBT's
- Heavily Carbon-Doped P-Type InGaAs Grown by Metalorganic Molecular Beam Epitaxy
- Preparation of GaAs and Ga_Al_xAs Multi-Layer Structures by Metalorganic Molecular Beam Epitaxy
- Metalorganic Molecular-Beam Epitaxial Growthand Characterization of GaAs Using Trimethyl- and Triethyl-Gallium Sources
- Photoluminescence properties of Cu(InGa)Se2 thin films prepared by mechanochemical process (Special issue: Nano electronic materials)
- Highly Stable ZnO Thin Films by Atomic Layer Deposition
- Textured ZnO Thin Films for Solar Cells Grown by a Two-step Process with the Atomic Layer Deposition Technique
- Growth of Transparent Conductive Oxide ZnO Films by Atomic Layer Deposition
- Polycrystalline Cu(InGa)Se_2 Thin-Film Solar Cells with ZnSe Buffer Layers
- Photoinduced Oxidation of Epitaxial Ga_2Se_3 Grown by Molecular Beam Epitaxy
- Effect of Heavy Doping on Band Gap and Minority Carrier Transport of AlGaAs/GaAs HBT's (SOLID STATE DEVICES AND MATERIALS 1)
- Defect Evaluation of Heavily P-Doped Si Epitaxial Films Grown at Low Temperature
- Control of the Arrangement of the Native Gallium Vacancies in Ga_2Se_3 on (100)GaAs by Molecular Beam Epitaxy
- Formation of ZnGa_2Se_4 Epitaxial Layer during Molecular Beam Epitaxial Growth of Ga_2Se_3 on ZnSe
- Raman Study of Epitaxial Ga_2 Se_3 Films Grown by Molecular Beam Epitaxy
- Optical Anisotropy of Vacancy-Ordered Ga_2Se_3 Grown by Molecular Beam Epitaxy
- Echocardiographic Diagnosis of Pulmonary Vein Varix
- Metalorganic Chemical Vapor Deposition of ZnO Using D_2O as Oxidant
- Optimization of ZnO Films for Amorphous Silicon Solar Cells
- Large-Area ZnO Thin Films for Solar Cells Prepared by Photo-Induced Metalorganic Chemical Vapor Deposition
- Mobility Enhancement of Textured ZnO Films by Ultraviolet Light Irradiation
- PJ-374 Aldosterone Increases Intrcellular Calcium Level and Myocyte Apoptosis through Calcineurin-Dependent Pathways(Apoptosis/Necrosis/Regeneration 1 (M) : PJ63)(Poster Session (Japanese))
- Inhibition of ACE attenuates apoptosis via bradykinin B_2 receptor and preserves Bcl-xL expression in the ischemia-reperfused rat heart
- A Novel Mechanism of Ethanol-Induced Cardiac Myocytes Injury
- Low-Temperature Si Epitaxy by Photochemical Vapor Deposition with SiH_2Cl_2
- p-Type a-SiC:H Films Using Triethylboron and Its Application to Solar Cells
- Effects of Deuterium on Low-Temperature Si Epitaxy by Photo-Chemical Vapor Deposition
- Heavily P-Doped (>10^ cm) Silicon Films Grown by Photochemical Vapor Deposition at a Very Low Temperature of 250℃
- Photochemical Vapor Deposition of Si/Si_Ge_x Strained Layer Superlattices at 250℃ : Silicon Heterostructures(Solid State Devices and Materials 1)
- Epitaxial Growth of Silicon by Plasma Chemical Vapor Deposition at a Very Low Temperature of 250℃
- Improved Cardiac Function After Catheter Ablation in a Patient With Type B Wolff-Parkinson-White Syndrome With an Old Myocardial Infarction
- ZnSe:Mn DC-Electroluminesent Cells Using Di-π-Cyclopentadienyl Manganese as a New Manganese Source Fabricated by Plasma-Assisted MOCVD
- Preparation of Nanocrystalline Silicon in Amorphous Silicon Carbide Matrix
- TiO_2-Coated Transparent Conductive Oxide (SnO_2:F) Films Prepared by Atmospheric Pressure Chemical Vapor Deposition with High Durability against Atomic Hydrogen
- Heavily Carbon-Doped P-Type GaAs Grown on GaAs Substrates with Various Orientations by Metalorganic Molecular Beam Epitaxy
- High Quality Amorphous Silicon Films Prepared by Atmospheric-Pressure Photo-CVD : Condensed Matter
- Optically Detected Magnetic Resonance in Fluorinated Amorphous Silicon (a-Si: H, F)
- High Deposition Rate of Polycrystalline Silicon Thin Films Prepared by Hot Wire Cell Method
- High-Efficiency Delta-Doped Amorphous Silicon Solar Cells Prepared by Photochemical Vapor Deposition
- Junction Properties of nip and pin Amorphous Si Solar Cells Prepared by a Glow Discharge in Pure Silane : III-2: AMORPHOUS SOLAR CELLS (1) : Proparation Process
- High Quality Aluminum Oxide Passivation Layer for Crystalline Silicon Solar Cells Deposited by Parallel-Plate Plasma-Enhanced Chemical Vapor Deposition
- Structural Analysis of Side and SiGeC Alloys by Ab Initio Total-Energy Calculations
- Structural Analysis of SiGeC Alloys by ab initio Total-Energy Calculations
- Fabrication of Sub-Micron Gap Structures using Directly-Deposited Amorphous Carbon Wires
- Development of Polycrystalline Culn_xGa_Se_2 Thin-Film Solar Cells with Band Gap of 1.3 to 1.5 eV
- Growth Mechanism during Silicon Epitaxy by Photochemical Vapor Deposition at Low Temperatures
- Characterization of Hydrogen in Epitaxial Silicon Films Grown at Very Low Temperatures
- Effects of Temperature and Spectral Irradiance on Performance of Silicon-Based Thin Film Multijunction Solar Cells
- p-Ga_Al_As/p-Ga_Al_yAs/n-Ga_Al_yAs Solar Cells : II-1: COMPOUND SOLAR CELLS
- Amorphous Silicon Thin Films Prepared by Hot Wire Cell Method and Its Application to Solar Cells
- Analysis of H_2-Dilution Effects on Photochemical Vapor Deposition of Si Thin Films
- Heavily B-Doped Epitaxial Si Films Grown by Photochemical Vapor Deposition at Very Low Temperature (
- Numerical Analysis of a Solar Cell with Tensile-Strained Ge as a Novel Narrow-Band-Gap Absorber
- Improvement of Film Quality in CuInSe2 Thin Films Fabricated by a Non-Vacuum, Nanoparticle-Based Approach
- Room Temperature Operation of Amorphous Carbon-Based Single-Electron Transistors Fabricated by Beam-Induced Deposition Techniques
- Single-Electron Tunneling through Amorphous Carbon Dots Array
- Sub-Micron Tungsten Carbide/Amorphous Carbon Stacked Diode Fabricated by Ion- and Electron-Beam-Induced Deposition Technique
- Characterization of Copper Indium Diselenide Thin Films by Raman Scattering Spectroscopy for Solar Cell Applications
- High Efficiency Amorphous Silicon Solar Cells with "Delta-Doped" P-Layer
- Numerical Study of Amorphous Silicon Based Solar Cell Performance Toward 15% Conversion Efficiency