Numerical Analysis to Improve the Stabilized-Efficiency of Amorphous Silicon Solar Cells with New Device Structure
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概要
- 論文の詳細を見る
Numerical analysis using a Scharfetter and Gummel solution of Poisson's equation is carried out to find new device structures in order to increase the stabilized-efficiency of amorphous silicon (a-Si) solar cells. The relationship between density of acceptor states in absorber-layer ($N_{\text{A}}$) and the characteristics of a-Si solar cells are calculated. It is found that stabilized-efficiency is increased when the distribution of electrons, holes and electric field inside the absorber-layer were controlled. In this study, carrier concentration of i-layer, p/i interface and i/n interface are investigated by calculation. As a result, stabilized-efficiency of 8.1% of a conventional a-Si solar cell could establish a high stabilized-efficiency of 9.3% by increasing the $N_{\text{A}}$ as same as the density of defect states in i-layer and also by applying partially doping near p-side of i-layer.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-02-15
著者
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Yamada Akira
Department Of Cardiology Aso-iizuka Hospital
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Dairiki Koji
Department of Electrical & Electric Engineering, Tokyo Institute of Technology
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Konagai Makoto
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Yamada Akira
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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