Optimum Cell Design for High-Performance A-Si:H Solar Cells Prepared by Photo-CVD
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概要
- 論文の詳細を見る
We have optimized the preparation conditions of p-i-n type a-Si:H solar cells prepared by photo-CVD. The pyramid-shaped SnO2 with haze ratio of 25% was chosen as the best TCO (transparent conductive oxide). The best efficiency obtained for a glass/TCO/p/buffer/i/n/Al structure of this type was 11.4% ($V_{\text{oc}}{=}0.90$ V, $I_{\text{sc}}{=}17.86$ mA/cm2, $FF{=}0.706$) for a $3\times 3$ mm2 cell; the thicknesses of the p-, buffer-, i-, and n-layers were 50 A, 150 A, 7800 A, and 600 A, respectively.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-03-20
著者
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Takahashi Kiyoshi
Department Of Agronomy Faculty Of Agriculture Tohoku University
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Kazama Yoshiyuki
Ishikawagima-Harima Heavy Industries Co., Ltd., 3-1-15, Toyosu, Koto-ku, Tokyo 135
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Kim Woo-Yeol
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1, Ohkayama, Meguro-ku, Tokyo 152
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Kim Woo-Yeol
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1, Ohokayama, Meguro-ku, Tokyo 152
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Kazama Yoshiyuki
Ishikawajima-Harima Heavy Industries Co., Ltd., 3-1-15, Toyosu, Koto-Ku, Tokyo 135
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Shibata Akio
Ebara Research Co., Ltd., 4720, Fujisawa, Fujisawa-shi, 251
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