Carbon Diffusion Behavior in a GaAs Tunnel Junction with a Heavily Carbon Doped p^+-Layer by Metalorganic Molecular Beam Epitaxy
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概要
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The diffusion behavior of a carbon-acceptor impurity in a p^+-n^+ GaAs tunnel junction with a heavily carbon doped p^+-layer was investigated in detail. The diffusion coefficients of carbon were deduced from the degradation rates of the peak current density of the GaAs tunnel diodes. The current-induced diffusion coefficient of carbon under forward bias operations at 2 kA/cm^2 was given by D_<C,current induced>=D_0exp(-Ea/kT), where D_0=1.5×10^<-13> cm^2/s and Ea=0.47±0.01 eV. In addition, the thermal diffusion coefficient was given by D_<C,thermal>=D_0exp(-Ea/kT), where D_0=1.1×10^<-9> cm^2/s and the activation energy Ea=1.47±0.01 eV.
- 社団法人応用物理学会の論文
- 1997-10-15
著者
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Oh Je-hwan
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Hayakawa Nobuhiro
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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