Influence of Light-Soaking Temperature on the Distribution of Thermal-Annealing Activation Energies for Photocreated Dangling Bonds in Hydrogenated Amorphous Silicon

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概要

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• Influence of light-soaking temperature on the formation of photocreated neutral dangling bonds (DBs) in hydrogenated amorphous silicon is investigated by light soaking at 77 K, room temperature (RT) and 90℃. Distributions of thermal annealing activation energies for the DBs photocreated at the three temperatures are obtained. The effect of light-soaking temperature on the increase rate of DBs and on the distribution of thermal annealing activation energies can be self-consistently fitted using two different rate equations. One contains a photocreation term, a thermal annealing term and a light-induced annealing term. The other has a photocreation term and a thermal annealing term modified by the light-induced annealing effect. The former rate equation can explain the very high density of photocreated DBs, while the latter can explain the recent result of light-induced annealing.

• 社団法人応用物理学会の論文
• 1995-11-15

著者

• Shimizu T

  Univ. Occupational And Environmental Health Jpn

• Shimizu Tadao

  Department Of Physics University Of Tokyo

• Shimizu T

  Department Of Electrical And Electronic Engineering Kanazawa University

• SHIMIZU Tatsuo

  Faculty of Engineering, Kanazawa University

• Kumeda M

  Kanazawa Univ. Kanazawa Jpn

• Kumeda Minoru

  Faculty Of Technology

• Kumeda Minoru

  Faculty Of Engineering Kanazawa University

• Shimizu T

  Chiba Univ. Chiba Jpn

• Zhang Q

  Zhongshan Univ. Guangzhou Chn

• ZHANG Qing

  Faculty of Engineering, Kanazawa University

• TAKASHIMA Hideki

  Faculty of Engineering, Kanazawa University

• Takashima Hideki

  Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University

• KUMEDA Minoru

  Department of Electronics Faculty of Technology, Kanazawa University

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