The Effect of the Replacement of Ge by Si in Ge-Chalcogenide Glasses
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1976-10-05
著者
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SHIMIZU Tatsuo
Faculty of Engineering, Kanazawa University
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Kumeda Minoru
Faculty Of Engineering Kanazawa University
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Kumeda Minoru
Faculty Of Technology Kanazawa University
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Nishimura Katsumi
Faculty Of Technology Kanazawa University
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Shimizu Tatsuo
Faculty Of Technology Kanazawa University
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- Light-induced Annealing of Photocreated Dangling Bonds in Hydrogenated Amorphous Silicon
- Decay Behavior of Light-Induced ESR in Hydrogenated Amorphous Silicon-Nitrogen Alloys
- Doping Effects of Group-III and -V Element on a-Si Prepared by High Pressure rf Sputtering : II-1: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (I)
- ESR in As_2S_3 Glasses
- Variation of the ESR Spectrum of Mn^ in Te_As_Ge_Si_x Glasses with x and Annealing
- The Effect of the Replacement of Ge by Si in Ge-Chalcogenide Glasses
- Influence of Mn Impurity in Te-As-Ge-Si Glasses
- ESR Studies of Mn^ in Multicomponent Amorphous Semiconductors
- Nonvolatile Memory Based on Phase Change in Se–Sb–Te Glass
- Composition Dependences of Electrical and Optical Properties of As_xTe_Ge_ and As_Te_Ge_Si_x Glasses