Influence of Mn Impurity in Te-As-Ge-Si Glasses

概要

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In order to investigate the roles and an incorporation scheme of impurities in amorphous semiconductors, electrical, optical and ESR measurements are carried out for Te_<48>As_<30>Ge_<10>Si_<12> glasses doped with various amounts of Mn. A decrease of the electrical activation energy E_a and broadening of the optical absorption edge are caused by the introduction of Mn, while the optical gap does not change appreciably. An ESR signal with g = 4.3 due to a small amount of Mn incorporated in the amorphous network is observed. The ESR center is explained by the double acceptor characteristic of Mn on the basis of the g-value and the magnitude of the hyperfine structure constant. It is concluded that the decrease of E_a is caused by the shift of the Fermi level E_F due to holes supplied by the double acceptors. From the linear relation between the shift of E_F and the center density of the ESR signal with g = 4.3, the upper limit of the density of localized states around E_F is estimated to be 1.5 × 10^<20> cm^<-3> eV^<-1>.
社団法人応用物理学会の論文
1976-02-05