Composition Dependences of Electrical and Optical Properties of As_xTe_<90-x>Ge_<10> and As_<35>Te_<55>Ge_<10-x>Si_x Glasses

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概要

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• The activation energy for conduction, the optical energy gap and the slope of the exponentialtail of the optical absorption were measured for As_xTe_90-xGe_10 and As_35Te_55Ge_10-xSi_x glasses and their composition dependences were studied. It was found that there exist some correlations among the compositional variations of the activation energy for conduction, of the slope of the exponential tail of the optical absorption and of the ESR signal with g=2.00 from doped Mnas a probe. The activation energy for conduction is found not to change in step, with the optica lenergy gap determined by the bond strength but to be affected by the shift of the mobility edge due to a change in the randomness of the amorphous structure or the shift of the Fermi level caused by a change in the density and the distribution of the localized gap states.

• 社団法人応用物理学会の論文
• 1977-02-05

著者

• SHIMIZU Tatsuo

  Faculty of Engineering, Kanazawa University

• Kumeda Minoru

  Faculty Of Engineering Kanazawa University

• Suzuki Masakuni

  Faculty Of Engineering Kanazawa University

• OHDAIRA Hiroyoshi

  Faculty of Technology, Kanazawa University

• MATSUMI Toshiyuki

  Faculty of Technology, Kanazawa University

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