Electrical and Structural Properties of Amorphous In-Se Films Prepared by Flash Evaporation
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概要
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Electrical conduction in amorphous In_xSe_<100-x> films is actually n-type, although some workers have considered it to be p-type, since p-type conduction is observed in the partially-crystallized films. A fairly large upward-Fermi-level-shift appears, in particular, in films with composition near x=40. Raman measurements show that In and Se are incorporated in the network in such a way that their surroundings are the same as those in α-In_2Se_3 crystal in the composition rangex= 0〜28, in γ-In_2Se_3 crystal at x=40 and in InSe crystal at x=50. The coordination number of In is likely to be four except at the composition near x=40, where five-fold coordinated In also exists, while the coordination number of Se is mainly three.
- 社団法人応用物理学会の論文
- 1985-10-20
著者
-
Watanabe Ichiro
Department of Cardiology, Nihon University School of Medicine
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Yamamoto Teiji
Department Of Electronics Faculty Of Technology Kanazawa University
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