A Novel Diffusion Resistant P-Base Region Implantation for Accumulation Mode 4H-SiC Epi-Channel Field Effect Transistor
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-04-30
著者
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Kumar Rajesh
Research Laboratories Denso Corporation
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Yamamoto T
Department Of Applied Chemistry Himeji Institute Of Technology
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Tanaka Yoshiaki
National Research Institute For Metals Tsukuba Laboratories
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Yamamoto Takenori
Deptarment Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Yamamoto Tokujirou
Department Of Materials Science And Engineering Kyoto University
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Kumar R
Research Laboratories Denso Corporation
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Yamamoto Teiji
Department Of Electronics Faculty Of Technology Kanazawa University
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KOZIMA Jun
Research Laboratories, DENSO CORPORATION
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YAMAMOTO Tsuyoshi
Research Laboratories, DENSO CORPORATION
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Kozima Jun
Research Laboratories Denso Corporation
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Yamamoto Tsuyoshi
Research And Development Dept. Nippondenso Co. Ltd.
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Yamamoto Takayoshi
The Institute Of Scientific And Industrial Research Osaka University
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Yamashiro Tomoki
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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