Microstructure of Polysilicon Films Grown by Catalytic Chemical Vapor Deposition Method
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-01-15
著者
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HEYA Akira
Industrial Research Institute of Ishikawa (IRII)
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HEYA Akira
JAIST(Japan Advanced Institute of Science and Technology)
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MATSUMURA Hideki
JAIST(Japan Advanced Institute of Science and Technology)
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Matsumura H
Jaist Ishikawa
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HE An-Qiang
JAIST(Japan Advanced Institute of Science and Technology)
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OTSUKA Nobuo
JAIST(Japan Advanced Institute of Science and Technology)
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Matsumura Hideki
Jaist (japan Advanced Institute Of Science And Technology)
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He A‐q
Japan Advanced Inst. Sci. And Technol. (jaist) Kanagawa Jpn
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Otsuka N
Japan Advanced Institute Of Science And Technology(jaist)
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Otsuka Nobuo
Department Of Metallurgy Tokyo Institute Of Technology
関連論文
- Control of Carrier Concentration in Thin Cuprous Oxide Cu_2O Films by Atomic Hydrogen
- Preparation of Low-Stress SiN_x Films by Catalytic Chemical Vapor Deposition at Low Temperatures
- Improvement of Deposition Rate by Sandblasting of Tungsten Wire in Catalytic Chemical Vapor Deposition
- Moisture-Resistive Properties of SiN_x Films Prepared by Catalytic Chemical Vapor Deposition below 100℃ for Flexible Organic Light-Emitting Diode Displays
- Effect of Atomic Hydrogen on Preparation of Highly Moisture-Resistive SiN_x Films at Low Substrate Temperatures
- Highly Moisture-Resistive SiN_x Films Prepared by Catalytic Chemical Vapor Deposition
- Control of Polycrystalline Silicon Structure by the Two-Step Deposition Method
- Development of Structural Analysis Method Based on Reverse Monte Carlo Simulation and Its Application to Catalytic Chemical Vapor Deposition Hydrogenated Amorphous Silicon
- Microstructure of Polysilicon Films Grown by Catalytic Chemical Vapor Deposition Method
- Properties of High-Mobility Cu_2O Films Prepared by Thermal Oxidation of Cu at Low Temperatures
- Improved Properties of Silicon Nitride Films Prepared by the Catalytic Chemical Vapor Deposition Method
- Photoresist Removal using Atomic Hydrogen Generated by Heated Catalyzer
- Properties of a New Passivation SiN_x Films Prepared by cat-CVD Method
- Metal-Backed Flourescent Screen for High Temperature RHEED Observation
- Electron State of Mn_4N Studied by Electron Diffraction
- Electron State of Ni_4N Studied by Electron Diffraction
- Improvement of Deposition Rate by Sandblasting of Tungsten Wire in Catalytic Chemical Vapor Deposition
- Development of Structural Analysis Method Based on Reverse Monte Carlo Simulation and Its Application to Catalytic Chemical Vapor Deposition Hydrogenated Amorphous Silicon
- Preparation of Low-Stress SiNx Films by Catalytic Chemical Vapor Deposition at Low Temperatures
- Moisture-Resistive Properties of SiNx Films Prepared by Catalytic Chemical Vapor Deposition below 100°C for Flexible Organic Light-Emitting Diode Displays
- Development of Micro-Assembling Technology for Fabrication of Large Size Liquid Crystal Displays
- Formation of Silicon-Based Thin Films Prepared by Catalytic Chemical Vapor Deposition (Cat-CVD) Method