Control of Carrier Concentration in Thin Cuprous Oxide Cu_2O Films by Atomic Hydrogen
スポンサーリンク
概要
- 論文の詳細を見る
- 2002-08-15
著者
-
Tabuchi Norikazu
Jaist (japan Advanced Institute Of Science And Technology)
-
Matsumura Hideki
Jaist (japan Advanced Institute Of Science And Technology)
関連論文
- Control of Carrier Concentration in Thin Cuprous Oxide Cu_2O Films by Atomic Hydrogen
- Control of Polycrystalline Silicon Structure by the Two-Step Deposition Method
- Microstructure of Polysilicon Films Grown by Catalytic Chemical Vapor Deposition Method
- Properties of High-Mobility Cu_2O Films Prepared by Thermal Oxidation of Cu at Low Temperatures
- Improved Properties of Silicon Nitride Films Prepared by the Catalytic Chemical Vapor Deposition Method
- Photoresist Removal using Atomic Hydrogen Generated by Heated Catalyzer
- Properties of a New Passivation SiN_x Films Prepared by cat-CVD Method
- Development of Structural Analysis Method Based on Reverse Monte Carlo Simulation and Its Application to Catalytic Chemical Vapor Deposition Hydrogenated Amorphous Silicon
- Development of Micro-Assembling Technology for Fabrication of Large Size Liquid Crystal Displays
- Formation of Silicon-Based Thin Films Prepared by Catalytic Chemical Vapor Deposition (Cat-CVD) Method