Properties of High-Mobility Cu_2O Films Prepared by Thermal Oxidation of Cu at Low Temperatures

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1996-11-15

著者

• MATSUMURA Hideki

  JAIST(Japan Advanced Institute of Science and Technology)

• Matsumura H

  Japan Advanced Inst. Sci. And Technol. (jaist) Ishikawa Jpn

• FUJII Asako

  JAIST (Japan Advanced Institute of Science and Technology)

• KITATANI Tomohiro

  JAIST (Japan Advanced Institute of Science and Technology)

• Matsumura Hideki

  Jaist (japan Advanced Institute Of Science And Technology)

関連論文

• Control of Carrier Concentration in Thin Cuprous Oxide Cu_2O Films by Atomic Hydrogen
• Control of Polycrystalline Silicon Structure by the Two-Step Deposition Method
• Development of Structural Analysis Method Based on Reverse Monte Carlo Simulation and Its Application to Catalytic Chemical Vapor Deposition Hydrogenated Amorphous Silicon
• Microstructure of Polysilicon Films Grown by Catalytic Chemical Vapor Deposition Method
• Properties of High-Mobility Cu_2O Films Prepared by Thermal Oxidation of Cu at Low Temperatures
• Improved Properties of Silicon Nitride Films Prepared by the Catalytic Chemical Vapor Deposition Method
• Photoresist Removal using Atomic Hydrogen Generated by Heated Catalyzer
• Properties of a New Passivation SiN_x Films Prepared by cat-CVD Method
• Development of Structural Analysis Method Based on Reverse Monte Carlo Simulation and Its Application to Catalytic Chemical Vapor Deposition Hydrogenated Amorphous Silicon
• Development of Micro-Assembling Technology for Fabrication of Large Size Liquid Crystal Displays
• Formation of Silicon-Based Thin Films Prepared by Catalytic Chemical Vapor Deposition (Cat-CVD) Method

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