Properties of a New Passivation SiN_x Films Prepared by cat-CVD Method
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概要
- 論文の詳細を見る
- 1996-08-26
著者
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MATSUMURA Hideki
JAIST(Japan Advanced Institute of Science and Technology)
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Matsumura Hideki
Jaist (japan Advanced Institute Of Science And Technology)
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Okada Shinya
Jaist (japan Advanced Institute Of Science And Technology)
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Okada Shinya
Jaist (japan Avanced Institute Of Science And Technology)
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Matsumura Hideki
Jaist (japan Avanced Institute Of Science And Technology)
関連論文
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- Properties of High-Mobility Cu_2O Films Prepared by Thermal Oxidation of Cu at Low Temperatures
- Improved Properties of Silicon Nitride Films Prepared by the Catalytic Chemical Vapor Deposition Method
- Photoresist Removal using Atomic Hydrogen Generated by Heated Catalyzer
- Properties of a New Passivation SiN_x Films Prepared by cat-CVD Method
- Development of Structural Analysis Method Based on Reverse Monte Carlo Simulation and Its Application to Catalytic Chemical Vapor Deposition Hydrogenated Amorphous Silicon
- Development of Micro-Assembling Technology for Fabrication of Large Size Liquid Crystal Displays
- Formation of Silicon-Based Thin Films Prepared by Catalytic Chemical Vapor Deposition (Cat-CVD) Method