Catalytic Decomposition of PH3 on Heated Tungsten Wire Surfaces

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概要

• 論文の詳細を見る

• The catalytic decomposition processes of PH3 on heated tungsten surfaces were studied to clarify the mechanisms governing phosphorus doping into silicon substrates. Mass spectrometric measurements show that PH3 can be decomposed by more than 50% over 2000 K. H, P, PH, and PH2 radicals were identified by laser spectroscopic techniques. Absolute density measurements of these radical species, as well as their PH3 flow rate dependence, show that the major products on the catalyst surfaces are P and H atoms, while PH and PH2 are produced in secondary processes in the gas phase. In other words, catalytic decomposition, unlike plasma decomposition processes, can be a clean source of P atoms, which can be the only major dopant precursors. In the presence of an excess amount of H2, the apparent decomposition efficiency is small. This can be explained by rapid cyclic reactions including decomposition, deposition, and etching to reproduce PH3.

• 2012-08-25

著者

• UMEMOTO Hironobu

  Japan Advanced Institute of Science and Technology (JAIST)

• Umemoto Hironobu

  Japan Science and Technology Agency, CREST, Sanbancho, Chiyoda, Tokyo 102-0075, Japan

• Nishihara Yushin

  Japan Science and Technology Agency, CREST, Sanbancho, Chiyoda, Tokyo 102-0075, Japan

• Ishikawa Takuma

  Japan Science and Technology Agency, CREST, Sanbancho, Chiyoda, Tokyo 102-0075, Japan

• Yamamoto Shingo

  Faculty of Engineering, Shizuoka University, Hamamatsu 432-8561, Japan

関連論文

• Preparation of Low-Stress SiN_x Films by Catalytic Chemical Vapor Deposition at Low Temperatures
• Improvement of Deposition Rate by Sandblasting of Tungsten Wire in Catalytic Chemical Vapor Deposition
• Moisture-Resistive Properties of SiN_x Films Prepared by Catalytic Chemical Vapor Deposition below 100℃ for Flexible Organic Light-Emitting Diode Displays
• Effect of Atomic Hydrogen on Preparation of Highly Moisture-Resistive SiN_x Films at Low Substrate Temperatures
• Highly Moisture-Resistive SiN_x Films Prepared by Catalytic Chemical Vapor Deposition
• Improvement of Deposition Rate by Sandblasting of Tungsten Wire in Catalytic Chemical Vapor Deposition
• Catalytic Decomposition of PH3 on Heated Tungsten Wire Surfaces
• Preparation of Low-Stress SiNx Films by Catalytic Chemical Vapor Deposition at Low Temperatures
• Moisture-Resistive Properties of SiNx Films Prepared by Catalytic Chemical Vapor Deposition below 100°C for Flexible Organic Light-Emitting Diode Displays

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