Hall Mobility and Scattering Mechanism of Holes in Boron-Doped Homoepitaxial Chemical Vapor Deposition Diamond Thin Films
スポンサーリンク
概要
- 論文の詳細を見る
The temperature dependence of the Hall mobility $\mu_{\text{H}}$ has been measured from 140 to 870 K for nine boron-doped homoepitaxial chemical vapor deposition (CVD) diamond thin films. The experimental $\mu_{\text{H}}$ data are compared with their theoretical $\mu_{\text{H}}$ values that are calculated by an iterative technique, assuming scattering by ionized impurities, acoustic deformation potential and nonpolar optical phonons. The donor concentration $N_{\text{D}}$, the acoustic deformation potential constant $E_{1}$ and the coupling constant of nonpolar optical phonons $D_{\text{npo}}$ are used as fitting parameters. The experimental data of the hole concentration $ p$ are also analyzed by a fitting procedure. The acceptor concentration $N_{\text{A}}$, the donor concentration $N_{\text{D}}$, and the acceptor ionization energy $E_{\text{A}}$ are used as fitting parameters. The fitting analyses of $\mu_{\text{H}}$ yielded an average $D_{\text{npo}}=(1.2\pm 0.2)\times 10^{12}$ eV/m. Considerable differences were observed between $N_{\text{D}}$ values estimated from the fitting analyses of $\mu_{\text{H}}$ and those from the $ p$-analyses. The average $E_{1}$ for the samples with little difference between the two types of $N_{\text{D}}$ is 14.5 eV, which is in agreement with that of a natural diamond of high quality. The average $E_{\text{A}}$ for the samples with a low or medium doping level is 0.365 eV, which is in good agreement with those in the literature. Some indications of the contribution of hopping conduction in the low-temperature range were observed.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-11-15
著者
-
OKUSHI Hideyo
Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
-
Okushi Hideyo
Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Tsukioka Kunio
Department of Intelligent Information Systems, Faculty of Engineering, Tamagawa University, 6-1-1 Tamagawa Gakuen, Machida, Tokyo 194-8610, Japan
-
Tsukioka Kunio
Department of Electronic Engineering, Faculty of Engineering, Tamagawa University, 6-1-1 Tamagawa Gakuen, Machida, Tokyo 194-8610, Japan
関連論文
- High-Efficiency Excitonic Emission with Deep-Ultraviolet Light from (001)-Oriented Diamond p-i-n Junction
- n-Type Control by Sulfur Ion Implantation in Homoepitaxial Diamond Films Grown by Chemical Vapor Deposition
- High-Quality B-Doped Homoepitaxial Diamond Films using Trimethylboron
- Cu/CaF_2/Diamond Metal-Insulator-Semiconductor Field-Effect Transistor Utilizing Self-Aligned Gate Fabrication Process
- High-Performance Diamond Metal-Semiconductor Field-Effect Transistor with 1 μm Gate Length
- Junction Properties and Gap States of ZnO Thin Film Prepared by Sol-Get Process
- Preparation of n-ZnO/p-Si Heterojunction by Sol-Gel Process
- Junction Properties of Polycrystalline Diamond / Hydrogenated Amorphous Silicon p-n Heterojunctions
- Polycrystalline Diamond/Hydrogenated Amorphous Silicon P-N Heterojunction
- Cyclotron Resonance of Polarons in AgBr at High Density Excitation
- DLTS Studies on InSb P-N^+ Diodes
- Strong Excitonic Emission from (001)-Oriented Diamond $P$–$N$ Junction
- Hall Mobility and Scattering Mechanism of Holes in Boron-Doped Homoepitaxial Chemical Vapor Deposition Diamond Thin Films
- High-Efficiency Excitonic Emission with Deep-Ultraviolet Light from (001)-Oriented Diamond $ p$–$i$–$n$ Junction
- Scattering Mechanisms of Carriers in Natural Diamond