Scattering Mechanisms of Carriers in Natural Diamond

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概要

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• The scattering mechanisms of carriers in natural diamond are investigated theoretically, based on the experimental low-field mobility data. The calculated values of low-field mobility are compared with published experimental data. Three types of intervalley phonon scatterings (zero-order) and acoustic phonon scattering are considered for electrons in the conduction band (c.b.), and acoustic and nonpolar-optical phonon scatterings are taken into account for holes in the valence band (v.b.). A procedure for fitting the theoretical mobility to the experimental mobility yields deformation potential constants and coupling constants of the intervalley and the nonpolar-optical phonons as follows: for electrons, $E_{1}(\text{c.b.})=8.8$ eV, $D_{\text{iv}1}=D_{\text{iv}2}=D_{\text{iv}3}=9.0\times 10^{10}$ eV/m, and for holes, $E_{1}(\text{v.b.})=14.5$ eV and $D_{\text{npo}}=5.5\times 10^{11}$ eV/m.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2001-05-15

著者

• Tsukioka Kunio

  Department of Electronic Engineering, Faculty of Engineering, Tamagawa University, 6-1-1 Tamagawa Gakuen, Machida, Tokyo 194-8610, Japan

関連論文

• Cyclotron Resonance of Polarons in AgBr at High Density Excitation
• DLTS Studies on InSb P-N^+ Diodes
• Hall Mobility and Scattering Mechanism of Holes in Boron-Doped Homoepitaxial Chemical Vapor Deposition Diamond Thin Films
• Scattering Mechanisms of Carriers in Natural Diamond

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