AlGaInN Violet Laser Diodes Grown on GaN Substrates with Low Aspect Ratio
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-01-15
著者
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Ishida Masaya
Devices Technology Research Laboratories Sharp Corporation
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Yuasa T
Advanced Technology Research Laboratories Sharp Corporation
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Yuasa Takayuki
Faculty Of Agriculture Kochi University
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Ueta Yoshihiro
Advanced Technology Research Laboratories Sharp Corporation
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ITO Shigetoshi
Devices Technology Research Laboratories, Sharp Corporation
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YAMASAKI Yukio
Devices Technology Research Laboratories, Sharp Corporation
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OMI Susumu
Devices Technology Research Laboratories, Sharp Corporation
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TAKATANI Kunihiro
Devices Technology Research Laboratories, Sharp Corporation
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KAWAKAMI Toshiyuki
Devices Technology Research Laboratories, Sharp Corporation
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OHNO Tomoki
Devices Technology Research Laboratories, Sharp Corporation
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UETA Yoshihiro
Devices Technology Research Laboratories, Sharp Corporation
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YUASA Takayuki
Devices Technology Research Laboratories, Sharp Corporation
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TANEYA Mototaka
Devices Technology Research Laboratories, Sharp Corporation
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Ueta Y
Advanced Technology Research Laboratories Sharp Corporation
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