AlGaInN Violet Laser Diodes Grown on GaN Substrates with Low Aspect Ratio
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概要
- 論文の詳細を見る
AlGaInN violet laser diodes grown on GaN substrates have been studied. Waveguide simulations have been performed and perpendicular radiation angles have been investigated. A peculiar layer structure has been proposed to reduce the perpendicular radiation angle and compared with a conventional laser. The laser structure has an n-cladding layer consisting of three AlGaN films, the middle film of which has relatively high Al composition. A laser diode with an optimized structure has been fabricated. The threshold current density and slope efficiency have been 2.9 kA/cm2 and 1.4 W/A, respectively. The perpendicular radiation angle has been as small as 16.2°. The AlGaInN violet laser diode with a low aspect ratio of 1.6 and a small threshold current of 29 mA has been realized.
- 2004-01-15
著者
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Ishida Masaya
Devices Technology Research Laboratories Sharp Corporation
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ITO Shigetoshi
Devices Technology Research Laboratories, Sharp Corporation
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KAWAKAMI Toshiyuki
Devices Technology Research Laboratories, Sharp Corporation
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OHNO Tomoki
Devices Technology Research Laboratories, Sharp Corporation
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UETA Yoshihiro
Devices Technology Research Laboratories, Sharp Corporation
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YUASA Takayuki
Devices Technology Research Laboratories, Sharp Corporation
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TANEYA Mototaka
Devices Technology Research Laboratories, Sharp Corporation
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Omi Susumu
Devices Technology Research Laboratories Sharp Corporation
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Yamasaki Yukio
Devices Technology Research Laboratories Sharp Corporation
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Takatani Kunihiro
Devices Technology Research Laboratories Sharp Corporation
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Yuasa Takayuki
Devices Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri 632-8567, Japan
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Ishida Masaya
Devices Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri 632-8567, Japan
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Kawakami Toshiyuki
Devices Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri 632-8567, Japan
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Taneya Mototaka
Devices Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri 632-8567, Japan
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Ito Shigetoshi
Devices Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri 632-8567, Japan
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Takatani Kunihiro
Devices Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri 632-8567, Japan
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Ueta Yoshihiro
Devices Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri 632-8567, Japan
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Ohno Tomoki
Devices Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri 632-8567, Japan
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Omi Susumu
Devices Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri 632-8567, Japan
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Yamasaki Yukio
Devices Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri 632-8567, Japan
関連論文
- AlGaInN Violet Laser Diodes Grown on GaN Substrates with Low Aspect Ratio
- Ohmic Contact Formation on p-type GaN Using Pd/Mo Electrode without Alloying Process
- AlGaInN Violet Laser Diodes Grown on GaN Substrates with Low Aspect Ratio