Blue Laser Diodes Fabricated on m-Plane GaN Substrates

概要

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Blue laser diodes (LDs) were fabricated on m-plane oriented GaN substrates by atmospheric-pressure metalorganic chemical vapor deposition. Typical threshold current for stimulated emission at a wavelength $\lambda$ of 463 nm was 69 mA. Blueshift of the spontaneous emission peak with increasing injection current was examined in LDs fabricated on m- and c-plane GaN substrates. Blueshifts for the m-plane LD ($\lambda=463$ nm) and the c-plane LD ($\lambda=454$ nm) with an injection current density just below threshold were about 10 and 26 nm, respectively. These results confirm that the blueshift in quantum-wells fabricated on m-plane oriented substrates is smaller than on c-plane oriented substrates due to the absence of polarization-induced electric fields.
The Japan Society of Applied Physicsの論文
2008-01-25