Current Density Dependence for Dark-Line Defect Growth Velocity in Strained InGaAs/AlGaAs Quantum Well Laser Diodes
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-03-01
著者
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Yuasa T
Advanced Technology Research Laboratories Sharp Corporation
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Yuasa Takayuki
Faculty Of Engineering The University Of Tokushima
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Endo Ken
Department Of Chemistry Sophia University
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ENDO Kenji
Opto-Electronics Research Laboratories, NEC Corporation
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Yuasa T
Researches And Environment Protection Research Laboratories Nec Corporation
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Endo Kenji
Opto-electronics Research Laboratories Nec Corporation
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ISHIKAWA Shin
Opto-Electronics Research Laboratories, NEC Corporation
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Fukagai Kazuo
Opto-Electronics Research Laboratories, NEC Corporation
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Yuasa Tonao
Researches and Environment Protection Research Laboratories, NEC Corporation
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Endo K
Department Of Chemistry Sophia University
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Fukagai Kazuo
Opto-electronics Research Laboratories Nec Corporation
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Ishikawa S
Doshisha Univ. Kyoto Jpn
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Endo Katsumi
Department of Chemistry, Sophia University
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