Activation of B and As in Ultrashallow Junction During Millisecond Annealing Induced by Thermal Plasma Jet Irradiation

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We have investigated effects of annealing temperature and heating and cooling rates during millisecond annealing on the activation of B and As in the Si lattice. In the case of As+-implanted samples, efficient dopant activation was observed at a temperature higher than 1000 K, while it was observed at a temperature higher than 1400 K in the case of B-implanted samples. The sheet resistance ($R_{\text{S}}$) of B-implanted samples monotonically decreases with temperature, and no significant dependence on heating rate ($R_{\text{h}}$) or cooling rate ($R_{\text{c}}$) is observed. On the other hand, As+-implanted samples show significant dependence of $R_{\text{S}}$ on $R_{\text{h}}$ and $R_{\text{c}}$. We have performed thermal plasma jet (TPJ) annealing on an As2+-implanted sample, and obtained an ultrashallow junction (USJ) with a junction depth ($X_{\text{j}}$) of 11.9 nm and a $R_{\text{S}}$ of 1095 $\Omega$/sq. B USJ is also obtained with a $X_{\text{j}}$ of 23.5 nm and a $R_{\text{S}}$ of 392 $\Omega$/sq. Precise control of $R_{\text{h}}$ and $R_{\text{c}}$ in addition to annealing temperature is quite important for achieving highly efficient doping in USJ.
2010-04-25