Layer Transfer and Simultaneous Crystallization Technique for Amorphous Si Films with Midair Structure Induced by Near-Infrared Semiconductor Diode Laser Irradiation and Its Application to Thin-Film Transistor Fabrication (Special Issue : Dry Process)
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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IKEDA Mitsuhisa
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima Univ
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Sakaike Kohei
Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences
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Kobayashi Yoshitaka
Department Of Orthopaedic Surgery Fukushima Medical University School Of Medicine
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Hayashi Shohei
Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences
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Nakamura Shogo
Department Of Biology Faculty Of Science Toyama University
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Higashi Seiichiro
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8530, Japan
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Akazawa Muneki
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Morisaki Seiji
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Nakamura Shogo
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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