Leading Wave Crystallization Induced by Micro-Thermal-Plasma-Jet Irradiation of Amorphous Silicon Films
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概要
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The crystalline grain growth of silicon induced by micro-thermal-plasma-jet irradiation has been directly observed using a high-speed camera. An oval-shaped molten region (MR) was formed after the solid phase crystallization (SPC), and it was clearly observed that laterally large grains grew perpendicular to the liquid--solid interface. Leading wave crystallization (LWC), which showed intermittent grain growth with a liquid--solid interface velocity as high as 4500 mm/s, was discovered in between the MR and SPC region. From numerical calculation, it has been clarified that the explosive lateral growth of LWC is triggered by the formation of a thin liquid layer and the explosive propagation of the layer is driven by released latent heat.
- 2013-05-25
著者
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IKEDA Mitsuhisa
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima Univ
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Sakaike Kohei
Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences
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Hayashi Shohei
Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences
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Fujita Yuji
Department Of Computer Science And Systems Engineering Faculty Of Engineering Miyazaki University
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Higashi Seiichiro
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Higashi Seiichiro
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8530, Japan
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Akazawa Muneki
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Kamikura Takahiro
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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FUJITA YUJI
Department of Chemical Engineering, Yamaguchi University
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Sakaike Kohei
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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