Experimental Evidence of Carrier Depletion Effect near n+Poly-Si Gate Side Wall/ SiO2 Interfaces for Sub-100nm nMOSFETs (2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices(AWAD 2001))
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概要
- 論文の詳細を見る
- 電子情報通信学会の論文
- 2001-07-05
著者
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Murakami Hideki
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Yamashita Hiroki
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Mihara Tatsuyoshi
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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YAMASHITA Hideo
Faculty of Engineering Hiroshima University
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Yamashita H
Hiroshima Univ Higashihiroshima
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