Formation of high-density Pt nanodots on SiO2 induced by millisecond rapid thermal annealing using thermal plasma jet for floating gate memory (Special issue: Dry process)

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• OKADA Tatsuya

  Faculty of Engineering, The University of Tokushima

• Matsumoto Kazuya

  Graduate School Of Computer Science And Engineering The University Of Aizu

• Makihara Katsunori

  Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Ikeda Mitsuhisa

  Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Higashi Seiichiro

  Graduate School of Advanced Science of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Miyazaki Seiichi

  Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Yamane Masato

  Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Morisawa Naoya

  Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

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