Structural Characterization of Sputtered Silicon Thin Films after Rapid Thermal Annealing for Active-Matrix Organic Light Emitting Diode
スポンサーリンク
概要
- 論文の詳細を見る
The microcrystalline phase obtained by adopting a two-step rapid thermal annealing (RTA) process for rf-sputtered silicon films deposited on thermally durable glass was characterized. The optical properties, surface morphology, and internal stress of the annealed Si films are investigated. As the thermally durable glass substrate allows heating of the deposited films at high temperatures, micro-polycrystalline silicon (micro-poly-Si) films of uniform grain size with a smooth surface and a low internal stress could be obtained after annealing at 750 °C. The thermal stress in the Si films was 100 times lower than that found in the films deposited on conventional glass. Uniform grains with an average grain size of 30 nm were observed by transmission electron microscopy (TEM) in the films annealed at 800 °C. These micro-poly-Si films have potential application for fabrication of uniform and reliable thin film transistors (TFTs) for large scale active-matrix organic light emitting diode (AMOLED) displays.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-12-25
著者
-
OKADA Tatsuya
Faculty of Engineering, The University of Tokushima
-
Noguchi Takashi
Faculty Of Agriculture Yamaguchi University
-
Chen Yi
Faculty of Engineering, University of the Ryukyus, Senbaru, Nishihara, Okinawa 903-0213, Japan
-
Mugiraneza Jean
Faculty of Engineering, University of the Ryukyus, 1 Senbaru, Nishihara, Okinawa 903-0213, Japan
-
Miyahira Tomoyuki
Faculty of Engineering, University of the Ryukyus, 1 Senbaru, Nishihara, Okinawa 903-0213, Japan
-
Sakamoto Akinori
Faculty of Engineering, University of the Ryukyus, 1 Senbaru, Nishihara, Okinawa 903-0213, Japan
-
Itoh Taketsugu
Corning Holding, Japan G.K., Akasaka Intercity, 1-11-44, Akasaka, Minato, Tokyo 107-0052, Japan
-
Chen Yi
Faculty of Engineering, University of the Ryukyus, 1 Senbaru, Nishihara, Okinawa 903-0213, Japan
-
Okada Tatsuya
Faculty of Engineering, University of the Ryukyus, 1 Senbaru, Nishihara, Okinawa 903-0213, Japan
関連論文
- Relationship between Deformation and Recrystallization in Σ3 Isoaxial Aluminum Bicrystal Deformed in Tension along the Axis
- Distribution of charred plant fragments in particle size fractions of Japanese volcanic ash soils(Soil Chemistry and Mineralogy)
- Crystallization Behavior of Sputtered Amorphous Silicon Films by Blue-Multi-Laser-Diode Annealing
- Formation of high-density Pt nanodots on SiO2 induced by millisecond rapid thermal annealing using thermal plasma jet for floating gate memory (Special issue: Dry process)
- Anomalous Increase in Resistivity of Boron-Doped Silicon Film after Solid Phase Crystallization
- Advanced Micro-Polycrystalline Silicon Films Formed by Blue-Multi-Laser-Diode Annealing
- Crystallization of Si Thin Film on Flexible Plastic Substrate by Blue Multi-Laser Diode Annealing (Special Issue : Active-Matrix Flatpanel Displays and Devices : TFT Technologies and FPD Materials)
- Structural Characterization of Sputtered Silicon Thin Films after Rapid Thermal Annealing for Active-Matrix Organic Light Emitting Diode