Hot Carrier Degradation of SiGe/Si Heterointerface and Experimental Estimation of Density of Locally Generated Heterointerface Traps

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概要

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• Hot carrier degradation at the interface of nanometer-thick SiGe/Si heterostructures introduced in the channel region of Si metal–oxide–semiconductor field-effect transistors (MOSFETs) was investigated using a recently established low-temperature charge pumping technique. The width of the hot-carrier-damaged heterointerface region was estimated from experimental measurements by investigating and elucidating the low-temperature charge pumping characteristics. Following this, a quantitative estimate of the density of locally generated heterointerface traps was made, and the stress gate voltage dependence of the density was also investigated. Studies of heterointerfaces, such as this, will become more important in order to achieve better performance and higher reliability in future nonclassical devices.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-08-15

著者

• Sakuraba Masao

  Research Institute For Electrical Communications Tohoku University

• Murota Junichi

  Research Institute For Electrical Communications Tohoku University

• Tsuchiya Toshiaki

  Interdisciplinary Faculty Of Science And Engineering Shimane University

• Sakuraba Masao

  Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

• Mishima Seishi

  Interdisciplinary Faculty of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan

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