The Effect of n-GaAs Carrier Concentration on Current Gain in InGaP/GaAs Heterojunction Bipolar Transistors

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概要

• 論文の詳細を見る

• The effect of n-GaAs carrier concentration in the Si-doped sub-collector layer on InGaP/GaAs heterojunction bipolar transistor (HBT) was investigated. Current gain slightly decreased with carrier concentration increased from $5\times 10^{17}$ to $2\times 10^{18}$ cm-3, while it dramatically decreased with carrier concentration increased over $2\times 10^{18}$ cm-3. It was also found that current gain with a high carrier concentration of $4\times 10^{18}$ cm-3 decreased with annealing time. Gummel plots revealed that the reduction in current gain is caused by creation of recombination centers in the base layer. We suggest the diffusion of Ga interstitial, which is generated together with Ga vacancy, is the origin of current gain degradation during the post-growth of the sub-collector layer.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-08-15

著者

• Hata Masahiko

  Tsukuba Research Laboratory Sumitomo Chemical Co. Ltd.

• Fukuhara Noboru

  Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd., 6 Kitahara, Tsukuba, Ibaraki 300-3294, Japan

• Yamada Hisashi

  Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd., 6 Kitahara, Tsukuba, Ibaraki 300-3294, Japan

• Hata Masahiko

  Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd., 6 Kitahara, Tsukuba, Ibaraki 300-3294, Japan

• Hata Masahiko

  Tsukuba Material Development Laboratory, Sumitomo Chemical Co., Ltd., Tsukuba, Ibaraki 300-3294, Japan

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• Frequency Shift of Terahertz Electromagnetic Waves Originating from Sub-Picosecond-Range Carrier Transport in Undoped GaAs/n-Type GaAs Epitaxial Layer Structures
• The Effect of n-GaAs Carrier Concentration on Current Gain in InGaP/GaAs Heterojunction Bipolar Transistors
• Reduction in Buffer Leakage Current with Mn-Doped GaN Buffer Layer Grown by Metal Organic Chemical Vapor Deposition
• Reduction in Buffer Leakage Current with Mn-Doped GaN Buffer Layer Grown by Metal Organic Chemical Vapor Deposition

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