Yamada Hisashi | Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd., 6 Kitahara, Tsukuba, Ibaraki 300-3294, Japan
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概要
- Yamada Hisashiの詳細を見る
- 同名の論文著者
- Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd., 6 Kitahara, Tsukuba, Ibaraki 300-3294, Japanの論文著者
関連著者
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Hata Masahiko
Tsukuba Research Laboratory Sumitomo Chemical Co. Ltd.
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Yamada Hisashi
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd., 6 Kitahara, Tsukuba, Ibaraki 300-3294, Japan
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Hata Masahiko
Tsukuba Material Development Laboratory, Sumitomo Chemical Co., Ltd., Tsukuba, Ibaraki 300-3294, Japan
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Nakayama Masaaki
Department Of Applied Physics Faculty Of Engineering Osaka City University
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Takeuchi Hideo
Department Of Applied Physics Faculty Of Engineering Osaka City University
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Yanagisawa Junichi
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Fukuhara Noboru
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd., 6 Kitahara, Tsukuba, Ibaraki 300-3294, Japan
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Yanagisawa Junichi
Department of Electronic Systems Engineering, School of Engineering, The University of Shiga Prefecture, 2500 Hassaka-cho, Hikone, Shiga 522-8533, Japan
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Nakayama Masaaki
Department of Applied Physics, Graduate School of Engineering, Osaka City University, 3-3-138 Sugimoto, Sumiyoshi-ku, Osaka 558-8585, Japan
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Tsuruta Syuuichi
Department of Applied Physics, Graduate School of Engineering, Osaka City University, 3-3-138 Sugimoto, Sumiyoshi-ku, Osaka 558-8585, Japan
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Hata Masahiko
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd., 6 Kitahara, Tsukuba, Ibaraki 300-3294, Japan
著作論文
- Frequency Shift of Terahertz Electromagnetic Waves Originating from Sub-Picosecond-Range Carrier Transport in Undoped GaAs/n-Type GaAs Epitaxial Layer Structures
- The Effect of n-GaAs Carrier Concentration on Current Gain in InGaP/GaAs Heterojunction Bipolar Transistors