The Built-in Voltage and the Charge Distributions in the Oxide of MOS Structure
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概要
- 論文の詳細を見る
The built-in voltage which exists in an oxide layer of a MOS structure was determined by analyzing the time saturated N_<FB> value as a function of voltage of the B.T. treatment. This voltage V_<MS> was assured by observing the transient ion current waveform through the MOS structure. The physically meaningful quantities of φ_<M-X>, the built-in voltage in the SiO_2 and the fixed positive charge at the Si-SiO_2 interface were derived for various samples. The potential, and the charge distribution in the SiO_2 were calculated by using solutions of the Poisson-Boltzmann equation by which the fundamental characteristics of the bias voltage dependence of the saturated N_<FB> in the B.T. treatment was found to be well understood.
- 社団法人応用物理学会の論文
- 1967-02-15
著者
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Tarui Yasuo
Electrotechnical Lab.
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KOMIYA Yoshio
Electrotechnical Lab.
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TESHIMA Hiroo
Electrotechnical Lab.
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Teshima Hiroo
Electrotechnical Laboratory
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