Sub-Quarter-Micron Gate Fabrication Process Using Phase-Shifting Mask for Microwave GaAs Devices
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-12-30
著者
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Jinbo Hideyuki
Research And Development Group Oki Electric Industry Co. Lid.
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Sano Yoshiaki
Research And Development Group Oki Electric Industry Co. Lid.
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INOKUCHI Kazuyuki
Research and Development Group, Oki Electric Industry Co., Lid.
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SAITO Tadashi
Research and Development Group, Oki Electric Industry Co., Lid.
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YAMASHITA Yoshio
Research and Development Group, Oki Electric Industry Co., Lid.
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Inokuchi Kazuyuki
Research And Development Group Oki Electric Industry Co. Lid.
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Yamashita Yoshio
Research And Development Group Oki Electric Industry Co. Lid.
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Saito Tadashi
Research And Development Group Oki Electric Industry Co. Lid.
関連論文
- Sub-Quarter-Micron Gate Fabrication Process Using Phase-Shifting Mask for Microwave GaAs Devices
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- Improved Threshold Voltage Uniformity in GaAs MESFET Using High Purity MOCVD-Grown Buffer Layer as a Substrate for Ion Implantation
- Comment on the Possibility and Effect of Cu Contamination during Heat Treatment of Te-Doped GaAs
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