Comment on the Possibility and Effect of Cu Contamination during Heat Treatment of Te-Doped GaAs
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1982-06-20
著者
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Nishizawa Jun-ichi
Research Institute Of Electrical Communication Tohoku University
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Nishizawa Jun-ichi
Research Institute Of Electrical Cammunication Tohoku University
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INOKUCHI Kazuyuki
Research and Development Group, Oki Electric Industry Co., Lid.
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Inokuchi Kazuyuki
Research Institute Of Electrical Communication Tohoku University
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Inokuchi Kazuyuki
Research And Development Group Oki Electric Industry Co. Lid.
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OTSUKA Hideo
Research Institute of Electrical Communication, Tohoku University
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YAMAKOSHI Shigenobu
Research Institute of Electrical Communication, Tohoku University
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ISHIDA Katsuhiko
Research Institute of Electrical Communication, Tohoku University
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Otsuka Hideo
Research Institute Of Electrical Communication Tohoku University:(present Address) Toshiba Corporati
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Yamakoshi Shigenobu
Research Institute Of Electrical Communication Tohoku University:(present Address) Fujitsu Laborator
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Ishida Katsuhiko
Research Institute Of Electrical Communication Tohoku University:(present Address) Nippon Gakki Co.
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NISHIZAWA Jun-ichi
Research Institute of Electrical Communication, Tohoku University
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