Recent Progress and Potential of SIT : A-0: OPENING

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1980-04-30

著者

• Nishizawa Jun-ichi

  Research Institute Of Electrical Communication Tohoku University

関連論文

• Epitaxial Growth with Light Irradiation
• Observation of Partial Dislocations of a Screw Type in Epitaxial Silicon Layers
• Bipolar Mode Static Induction Transistor : A-6: CHARGE TRANSFER DEVICES/SIT AND OTHER DEVICES
• Recent Progress and Potential of SIT : A-0: OPENING
• Comment on the Possibility and Effect of Cu Contamination during Heat Treatment of Te-Doped GaAs
• Nonstoichiometry of Te-Doped GaAs
• Annealing of N-Type GaAs under Excess Arsenic Vapor
• Compensation Effect of GaAs Junction Lasers
• Static Induction Transistor Memory : A-6: CHARGE TRANSFER DEVICES/SIT AND OTHER DEVICES
• Bright Pure Green Emission from N-free GaP LED's : B-2: GaAs FET/LED AND DETECTOR
• Deep Levels Studies of N-Free and N-Doped GaP Grown by TDM-CVP
• Luminescence from Diffused In_Ga_xP p_n Junctions
• Bright Yellow Luminescence from In_Ga_xP p-n Junctions
• Growth of In_Ga_xP Crystals from Solution
• Static Induction Transistor Logic : A-6: CHARGE TRANSFER DEVICES/SIT AND OTHER DEVICES
• Conservation of Polarization in GaAs Junction LASER
• Gain Factor and Internal Loss of GaAs Junction Lasers
• CHEMICAL VAPOR DEPOSITION OF SILICON(Fundamentals of Vapour Growth and Epitaxy : Lecture Notes of the ICVGE-4 Specialists' School)
• Photosensitive Paramagnetic Resonance in Fe-Doped Gallium Phosphide

もっと見る 閉じる

スポンサーリンク