Deep Levels Studies of N-Free and N-Doped GaP Grown by TDM-CVP
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概要
- 論文の詳細を見る
The energies and densities of deep levels in N-free and N-doped GaP LED depend on the applied phosphorus pressure during epitaxial growth. Especially, the deep level in N-free GaP located at E_C-E_T=0.65 eV strongly affects the brightness of emission and has close correlation with the shallow donor concentration in the n layer. The deep levels in N-doped GaP are complicated and their energies change according to the phosphorus pressure. Some of the deep levels in N-doped GaP are proposed for the complex of nitrogen.
- 社団法人応用物理学会の論文
- 1980-01-05
著者
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Nishizawa Jun-ichi
Research Institute Of Electrical Communication Tohoku University
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Nishizawa Jun-ichi
Research Institute Of Electrical Communication
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Nishizawa Jun-ichi
Research Institute Of Electrical Cammunication Tohoku University
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Koike Masayoshi
Research Institute Of Electrical Communication
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OKUNO Yasuo
Semiconductor Research Institute
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MIURA Kaichi
Research Institute of Electrical Communication
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