Precise Position Control by Electromagnet
スポンサーリンク
概要
- 論文の詳細を見る
Precise position control with an accuracy of 10 μ was impossible by mechanical means such as screw movement used so far. This is because continuous movement couldn't be expected due to sliding friction from a microscopic point of view. Also, it was impossible to avoid backlash even though mechanical pressure by spring may be adopted. The authors have developed practically precise control with an accuracy of 0.2 μ by a new method utilizing the electromagnetic force. In the new equipment, dynamic characteristics are also excellent because the damping time can be designed independently of characteristic frequency by electrical damping and because resistance to deviation from exact position can be selected widely by electrical feedback from a laser interferometer. For example, 66 g-wt is necessary to move it 0.1 μ in the case of only 0.56 W electromagnet, and the time taken for it to become stationary is less than 100 msec at the present stage.
- 一般社団法人日本機械学会の論文
著者
-
Nishizawa Jun-ichi
Research Institute Of Electrical Cammunication Tohoku University
-
Nishizawa Jun-ichi
Research Institute Of Electrical Communication; Tohoku University
-
Takahashi Kaoru
Stanley Electric Co. Ltd.
-
Hirano Saijo
Kokusai Electric Co. Ltd.
-
ICHINOSE Wasaburo
Kokusai Electric Co., Ltd.
-
Ichinose Wasaburo
Kokusai Electric Co. Ltd.
関連論文
- Epitaxial Growth with Light Irradiation
- Observation of Partial Dislocations of a Screw Type in Epitaxial Silicon Layers
- Bipolar Mode Static Induction Transistor : A-6: CHARGE TRANSFER DEVICES/SIT AND OTHER DEVICES
- Comment on the Possibility and Effect of Cu Contamination during Heat Treatment of Te-Doped GaAs
- Nonstoichiometry of Te-Doped GaAs
- Annealing of N-Type GaAs under Excess Arsenic Vapor
- Compensation Effect of GaAs Junction Lasers
- Static Induction Transistor Memory : A-6: CHARGE TRANSFER DEVICES/SIT AND OTHER DEVICES
- Bright Pure Green Emission from N-free GaP LED's : B-2: GaAs FET/LED AND DETECTOR
- Deep Levels Studies of N-Free and N-Doped GaP Grown by TDM-CVP
- Luminescence from Diffused In_Ga_xP p_n Junctions
- Bright Yellow Luminescence from In_Ga_xP p-n Junctions
- Growth of In_Ga_xP Crystals from Solution
- Static Induction Transistor Logic : A-6: CHARGE TRANSFER DEVICES/SIT AND OTHER DEVICES
- Conservation of Polarization in GaAs Junction LASER
- Gain Factor and Internal Loss of GaAs Junction Lasers
- Tunneling Spectroscopy in MS and MIS Tunnel Junctions of Degenerate n-Type Semiconductor
- Balance Method for Experiments under Controlled Vapor Pressure
- Turn-on Mechanism of a Microplasma
- STOICHIOMETRIC CRYSTALLIZATION METHOD OF III-V COMPOUNDS FOR LED AND INJECTION LASERS(Fundamentals of Vapour Growth and Epitaxy : Lecture Notes of the ICVGE-4 Specialists' School)
- CHEMICAL VAPOR DEPOSITION OF SILICON(Fundamentals of Vapour Growth and Epitaxy : Lecture Notes of the ICVGE-4 Specialists' School)
- Photosensitive Paramagnetic Resonance in Fe-Doped Gallium Phosphide
- Measurements of Internal Parameters of a Microplasma
- Anomalous Diffusion of Phosphorus into Silicon
- Precise Position Control by Electromagnet