Luminescence from Diffused In_<1-x>Ga_xP p_n Junctions

概要

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Electroluminescence spectra from In_<1-x>Ga_xP p-n junctions have been measured at 77 K and at higher temperatures for a number of diodese with x=0.5 to 0.9, in particular, near the crossover composition. Various peaks appear in the spectra as the forward current increases from 10^<-3> A/cm^2 to 30 A/cm^2. The current dependence of the spectra is studied in detail. The spectra and their temperature dependences in the direct-band-gap region are found to be greatly different from those in the indirect-band-gap region. In the direct-band-gap region, four peaks P_1, P_2, P_3 and P_4 are usually observed at 77 K. The highest-energy peak P_1 is 0 to 20 meV below the Г conduction band which has been estimated from the 300 K cathodoluminescence. The energy separation between P_1 and P_3 is 70-75 meV. In the indirect-band-gap region, two weak bands A_1 and A_2 are observed on the higher energy side of the dominant band P_1 due to the donor-acceptor transition at 77 K. The energy position of the highest energy peak A_1 is very near the expected energy position of the free exciton of excitons trapped by some shallow impurities. At 177 K, A_1 and A_2 become dominant compared to P_1. The cross-over composition of direct- and indirect-band-gaps is estimated to be close to 0.72.
社団法人応用物理学会の論文
1975-02-05